Samsung begins mass manufacturing of ninth gen V-NAND: 50% larger density, 33% larger pace

Samsung introduced that’s has began mass manufacturing of the brand new ninth technology vertical NAND (V-NAND) reminiscence chips. They’ve 50% larger bit density than eighth technology merchandise.

Moreover, the ninth gen merchandise help a brand new NAND flash interface referred to as “Toggle 5.1” that allows knowledge switch speeds of as much as 3.2Gbps, that is 33% larger than earlier generations. To prime all of it off, the brand new chips are 10% extra energy environment friendly.

A whole lot of work went into the ninth technology of V-NAND. Samsung used new improvements like cell interference avoidance and cell life extension. Additionally, the corporate leveraged its superior channel gap etching know-how, which helps to maximise productiveness on the manufacturing facility.

Samsung starts mass production of 9th gen V-NAND: 50% higher density, 33% higher speed

The brand new quicker, larger capability V-NAND chips will likely be utilized in merchandise like high-performance SSDs. Samsung plans to broaden help for PCIe 5.0 to utilize all the additional pace.

Proper now the corporate is mass producing 1Tb ninth gen V-NAND chips with triple-level cells (TLC). Within the second half of this yr it’ll additionally begin making a quad-level cell (QLC) variant of those chips.

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